hs817, hs817g, HS817B, HS817Bg www.vishay.com vishay semiconductors rev. 1.2, 27-jul-11 1 document number: 83548 for technical questions, contact: optocoupleranswers@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 optocoupler with transistor output description the hs817 series consists of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 4-lead plastic dual inline package. agency approvals ? bsi: en 60065, en 60950-1:2006 ?fimko ? ul file no. e52744 ? cul tested to csa 22.2 bulletin 5a features ? rated impulse voltage (transient overvoltage) v iotm = 6 kv peak ? isolation test voltage (partial discharge test voltage) v pd = 1.6 kv ? rated isolation voltage (rms includes dc) v iowm = 600 v rms ? rated recurring peak voltage (repetitive) v iorm = 850 v peak ? creepage current resistance according to iec 112, comparative tracking index: cti ? 250 ? thickness through insulation ? 0.4 mm ? isolation materials a ccording to ul 94 v-o ? pollution degree 2 (resp. iec 664) ? climatic classification 55/100/21 (iec 68 part 1) ? low temperature coefficient of ctr ? g = leadform 10.16 mm; pro vides creepage distance > 8 mm, suffix letter g is not marked on the optocoupler ? compliant to rohs directive 2002/95/ec and in accordance to weee 2002/96/ec applications ? switch-mode power supplies ? line receiver ? computer peripheral interface ? microprocessor system interface notes ? g = leadform 10.16 mm; g is not marked on the body. ? for additional information on the available options refer to option information. 17197_7 c e ac 3 4 2 1 17197_4 ordering information hs817xx part number ctr bin package option agency certified/package ctr (%) ul, cul, bsi, fimko 100 to 300 130 to 260 dip-4 hs817 HS817B dip-4, 400 mil hs817g HS817Bg 10.16 mm 7.62 mm dip-# dip-#, 400 mil free datasheet http://
hs817, hs817g, HS817B, HS817Bg www.vishay.com vishay semiconductors rev. 1.2, 27-jul-11 2 document number: 83548 for technical questions, contact: optocoupleranswers@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 notes ? stresses in excess of the abso lute maximum ratings can cause permanent damage to the device. functional operation of the devic e is not implied at these or any other conditions in excess of those give n in the operational sections of this document. exposure to abs olute maximum ratings for extended periods of the time can adversely affect reliability. (1) refer to wave profile for soldering conditions for thro ugh hole devices. fig. 1 - total power dissipation vs. ambient temperature absolute maximum ratings (t amb = 25 c, unless otherwise specified) parameter test condition symbol value unit input reverse voltage v r 6v forward current i f 60 ma forward surge current t p ? 10 s i fsm 1.5 a power dissipation t amb ? 25 c p diss 100 mw junction temperature t j 125 c output collector emitter voltage v ceo 70 v emitter collector voltage v eco 7v collector current i c 50 ma collector peak current t p /t = 0.5, t p ? 10 ms i cm 100 ma power dissipation t amb ? 25 c p diss 150 mw junction temperature t j 125 c coupler isolation test voltage (rms) t = 1 s v iso 5kv total power dissipation t amb ? 25 c p tot 250 mw operating ambient temperature range t amb - 40 to + 100 c storage temperature range t stg - 55 to + 125 c soldering temperature (1) 2 mm from case, t ? 10 s t sld 260 c 0 50 100 150 200 250 300 0 40 80 120 p tot - total power dissipation (mw) t amb - ambient temperature (c) 96 11700 coupled device phototransistor ir-diode free datasheet http://
hs817, hs817g, HS817B, HS817Bg www.vishay.com vishay semiconductors rev. 1.2, 27-jul-11 3 document number: 83548 for technical questions, contact: optocoupleranswers@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 note ? minimum and maximum values were tested requierements. typical va lues are characteristics of the device and are the result of e ngineering evaluations. typical values are for information only and are not part of the testing requirements. note ? this optocoupler is suitable for safe electrical isolation only within the safety ratings. comp liance with the safety ratings shall be ensured by means of suitable protective circuits. electrical characteristics (t amb = 25 c, unless otherwise specified) parameter test condition symbol min. typ. max. unit input forward voltage i f = 50 ma v f 1.43 1.6 v junction capacitance v r = 0 v, f = 1 mhz c j 50 pf output collector emitter voltage i c = 1 ma v ceo 70 v emitter collector voltage i e = 100 a v eco 7v collector emitter cut-off current v ce = 20 v, i f = 0 a i ceo 10 100 na coupler collector emitter sa turation voltage i f = 10 ma, i c = 1 ma v cesat 0.3 v cut-off frequency v ce = 5 v, i f = 10 ma, r l = 100 ? f c 110 khz coupling capacitance f = 1 mhz c k 0.6 pf current transfer ratio (t amb = 25 c, unless otherwise specified) parameter test condition part number symbol min. typ. max. unit i c /i f v ce = 5 v, i f = 5 ma hs817 ctr 100 300 % hs817g ctr 100 300 HS817B ctr 130 260 HS817Bg ctr 130 260 safety and insulation parameters parameter test condition symbol min. typ. max. unit insulation resistance v io = 500 v r io 10 12 ? v io = 500 v, t amb = 100 c r io 10 11 ? v io = 500 v, t amb = 150 c (construction test only) r io 10 9 ? rated impulse voltage v iotm 6kv max. working voltages recurring peak voltage v iorm 850 v peak forward current i si 130 ma power dissipation t amb ? 25 c p so 265 mw safety temperature t si 150 c creepage distance 7.6 mm free datasheet http://
hs817, hs817g, HS817B, HS817Bg www.vishay.com vishay semiconductors rev. 1.2, 27-jul-11 4 document number: 83548 for technical questions, contact: optocoupleranswers@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 2 - derating diagram fig. 3 - test circuit, non-sa turated operation fig. 4 - test circuit, saturated operation 0 25 50 75 125 0 50 100 150 200 300 t si - safety temperature (c) 150 100 250 phototransistor p so (mw) ir-diode i si (ma) switching characteristics (t amb = 25 c, unless otherwise specified) parameter test condition symbol min. typ. max. unit delay time v s = 5 v, i c = 2 ma, r l = 100 ? , (see figure 3) t d 3s rise time v s = 5 v, i c = 2 ma, r l = 100 ? , (see figure 3) t r 3s fall time v s = 5 v, i c = 2 ma, r l = 100 ? , (see figure 3) t f 4.7 s storage time v s = 5 v, i c = 2 ma, r l = 100 ? , (see figure 3) t s 0.3 s turn-on time v s = 5 v, i c = 2 ma, r l = 100 ? , (see figure 3) t on 6s turn-off time v s = 5 v, i c = 2 ma, r l = 100 ? , (see figure 3) t off 5s turn-on time v s = 5 v, i f = 10 ma, r l = 1 k ? , (see figure 4) t on 2s turn-off time v s = 5 v, i f = 10 ma, r l = 1 k ? , (see figure 4) t off 18 s channel i channel ii 95 10804 r g = 50 t p t p = 50 s t = 0.01 + 5 v i f 0 50 100 i f i c = 2 ma; adjusted through input amplitude oscilloscope r l = 1 m c l = 20 pf channel i channel ii 95 10843 r g = 50 t p t p = 50 s t = 0.01 + 5 v i c i f 0 50 1 k i f = 10 ma oscilloscope r l c l 20 pf 1 m free datasheet http://
hs817, hs817g, HS817B, HS817Bg www.vishay.com vishay semiconductors rev. 1.2, 27-jul-11 5 document number: 83548 for technical questions, contact: optocoupleranswers@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 5 - switching times typical characteristics (t amb = 25 c, unless otherwise specified) fig. 6 - forward voltage vs. forward current fig. 7 - collector current vs. collector emitter voltage (ns) fig. 8 - leakage current vs. ambient temperature fig. 9 - collector current vs. collector emitter voltage (sat) t p t t 0 0 10 % 90 % 100 % t r t d t on t s t f t off i f i c t p pulse duration t d delay time t r rise time t on (= t d + t r ) turn-on time t s storage time t f fall time t off (= t s + t f ) turn-off time 96 11698 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 0.1 1 10 100 v f - forward voltage (v) i f - forward current (ma) t amb = 0 c t amb = 25 c t amb = 50 c t amb = 75 c t amb = 100 c t amb = - 40 c i c - collector current (ma) v ce - collector emitter voltage (n s ) (v) 0 5 10 15 20 25 30 35 40 45 50 012345678 i f = 30 ma i f = 20 ma i f = 15 ma i f = 10 ma i f = 5 ma 0.001 0.1 10 1000 10 000 0.01 1 100 i ce0 - leakage current (na) t amb - ambient temperature (c) - 40 - 20 0 20 40 60 80 100 i f = 0 ma v ce = 40 v v ce = 24 v v ce = 12 v i c - collector current (ma) v ce - collector emitter voltage ( s at) (v) 0 5 10 15 20 25 30 0 0.1 0.2 0.3 0.4 i f = 25 ma i f = 10 ma i f = 5 ma i f = 2 ma i f = 1 ma free datasheet http://
hs817, hs817g, HS817B, HS817Bg www.vishay.com vishay semiconductors rev. 1.2, 27-jul-11 6 document number: 83548 for technical questions, contact: optocoupleranswers@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 10 - normalized ctr (sat) vs. ambient temperature fig. 11 - normalized ctr (n s) vs. ambient temperature fig. 12 - normalized ctr (ns) vs. forward current fig. 13 - normalized ctr (sat) vs. forward current fig. 14 - f ctr vs. collector current fig. 15 - f ctr vs. phase angle 0 0.2 0.4 0.6 0.8 1.0 1.2 -40-200 20406080100 n ctr - normalized ctr ( s at) t amb - ambient temperature ( c) v ce =0.4 v normalized to: i f = 5 ma, v ce = 5 v, t amb = 25 c i f = 5 ma i f = 10 ma i f = 1 ma 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 -40-200 20406080100 n ctr - normalized ctr (n s ) t amb - ambient temperature ( c) normalized to: i f = 5 ma, v ce = 5 v, t amb = 25 c i f = 10 ma i f = 5 ma i f = 1 ma 0 0.2 0.4 0.6 0.8 1.0 1.2 0.1 1 10 100 n ctr - normalized ctr (n s ) i f - forward current (ma) normalized to: i f = 5 a, v ce = 5 v, t amb = 25 c t amb = 0 c t amb = 100 c t amb = 75 c t amb = - 40 c t amb = 25 c 0 0.2 0.4 0.6 0.8 1.0 1.2 0.1 1 10 100 n ctr - normalized ctr ( s at) i f - forward current (ma) v ce = 0.4 v normalized to: i f = 5 ma, v ce = 5 v, t amb = 25 c t amb = 0 c t amb = 75 c t amb = - 40 c t amb = 25 c t amb = 100 c f ctr (khz) i c - collector current (ma) 1 10 100 1000 0.1 1 10 100 v ce = 5 v pha s e (deg) fre q uency (khz) 1 10 100 1000 - 160 - 140 - 120 - 100 - 80 - 60 - 40 - 20 0 v ce = 5 v free datasheet http://
hs817, hs817g, HS817B, HS817Bg www.vishay.com vishay semiconductors rev. 1.2, 27-jul-11 7 document number: 83548 for technical questions, contact: optocoupleranswers@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 16 - switching time vs. load resistance package dimensions in millimeters package marking (example) t on , t off - s witching time ( s ) r l - load re s i s tance (k ) 0.1 1 10 100 1000 0.1 1 10 100 t on t off v ce = 5 v, i f = 10 ma i178027-14 0.25 typ. 0 to 15 7.62 typ. 2.8 0.5 7.62 to 9.5 6.5 0.3 4.58 0.3 2.54 typ. 3.5 0.3 4.5 0.3 1.3 0.1 0.4 0.1 pin 1 identifier 0.5 0.1 g type 10.16 typ. 7.62 typ. 3.5 0.3 2.7 min. 0.1 min. hs817 v yww 24 free datasheet http://
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